GBP
The Nexperia PBSS4350T215 is a rugged, NPN low-VCEsat (BISS) bipolar transistor housed in a compact SOT-23 (TO-236AB) plastic package. Engineered for high-performance switching, it excels in applications demanding high current, thermal resilience, and efficiency.
Moreover, lower saturation voltage translates to reduced heat generation and power losses, which are crucial in power converters, battery management, and thermal-constrained designs.
Core Features and Benefits of the Product
- Voltage Handling: Rated for a robust 50 V VCEO / VCBO.
- High Current Capability: Supports continuous Ic up to 2 A, with pulsed peaks to 3 A or more.
- Amplification: Delivers DC gain (hFE) ≥ 300 at 1 A/2 V, sustaining useful gain even at high currents.
- Frequency Response: Transition frequency around 100 MHz, enabling crisp signal switching.
- Thermal Endurance: Junction temperature up to 150 °C, with power dissipation reaching ~300‑540 mW depending on mounting and conditions.
- Compact SMD Form: SOT-23 footprint (approx. 2.9 × 1.3 × 1 mm) ensures space-saving PCB layouts.DigiKey, Nexperia, and Nexperia.
Versatility in Applications
Ideal for global B2B and technical markets in:
- Power management, DC/DC converters
- Battery chargers, supply line switching
- Low-dropout (LDO) regulators, where low voltage drop is critical