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NXP BAS31215 110 V High‑Speed Switching Diode Dual Series SOT‑23‑3

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HT Part No. HT295030

Mfr. Part No. BAS31,215

Manufacturer: NXP

Technical Documents: Datasheet(datasheets)

2151 - In Stock pcs
Price:
£ 0.040
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10000 + £ 0.033
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Product Specification

Product Attributes
Mounting Type SMT
Diode Configuration Dual Series
Package / Case SOT23-3
Voltage (VRRM) 110V
Rohs ROHS
Packaging TAPE&REEL
Polarity None
Current - Average (Each Diode) 250mA
Case Material Plastic
Applications General Purpose
Manufacturer NXP
Series Standard
Reverse Recovery Time (Trr) 50ns
Operating Temperature -55°C~+150°C

More Information

The BAS31 is a nimble, small signal SOT 23 diode engineered for swift and dependable performance in compact electronic systems. Boasting a compact surface-mount form factor, it's purpose-built for fast switching and efficient rectification in general-purpose applications. Its robust voltage and current ratings make it a steady choice for designers who demand both speed and reliability from a resilient, easy-to-integrate component.

What Benefits Do You Get?

You get a diode that’s both agile and durable, fast switching speeds minimize signal lag and energy loss, while its solid voltage and current handling keep circuits stable under stress. Packaged in a slim SOT 23 layout, it fits tight spaces without sacrificing performance. Whether you’re working on power-efficient converters or tight drive logic circuits, the BAS31 is built to deliver consistent, dependable switching and rectification.

Product Functional Highlights:

  • Compact SOT 23 surface mount package ideal for space constrained designs
  • Fast switching speed up to approximately 50 ns, enabling high-frequency operation
  • Continuous reverse voltage of up to 90 V and repetitive peak reverse voltage up to 110 V for strong voltage endurance
  • Handles repetitive peak forward current up to 600 mA robust enough for demanding pulses
  • Rated average forward rectified current of around 200 mA suitable for light power applications
  • Low reverse leakage: as little as 0.1 µA at 90 V, ensuring minimal standby losses
  • Maximum forward voltage is around 1.0 V to 1.25 V, depending on current conditions
  • Capacitance roughly 35 pF, helping to maintain signal fidelity at high speeds
  • High thermal resilience with operating junction temperature up to 150 °C and power dissipation around 350 mW
  • Stable series-connected diode configuration for versatile circuit applications.

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