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NXP BAS21SW,115 High‑Voltage Dual Switching Diode Array in SOT‑323

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HT Part No. HT295113

Mfr. Part No. BAS21SW,115

Manufacturer: NXP

Technical Documents: Datasheet(datasheets)

1865 - In Stock pcs
Price:
£ 0.056
Units Per Unit Price
5 - 99 £ 0.056
100 - 499 £ 0.053
500 + £ 0.049
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Product Specification

Product Attributes
Case Material Plastic
Diode Configuration Dual Series
Mounting Type SMT
Applications Automotive(AEC-Q101)
Package / Case SOT323
Voltage (VRRM) 250V
Series Switching
Current - Average (Each Diode) 225mA
Reverse Recovery Time (Trr) 50ns
Rohs ROHS
Manufacturer NXP
Polarity None
Operating Temperature -55°C~+150°C
Packaging TAPE&REEL

More Information

The BAS21SW,115 is a high-voltage, dual-series switching diode engineered by Nexperia to deliver rapid switching performance and exceptional reliability in a remarkably compact SOT-323 (SC-70) surface-mount package. Ideal for space-constrained and demanding electronic designs, this diode combines robust voltage tolerance of up to 250 V with exceptionally low leakage and capacitance, making it a standout choice for high-speed rectification, polarity protection, and voltage clamping in both industrial and automotive applications.

Why Buy BAS21SW,115?

If you’re looking for a diode that marries durability with ultra-fast response, the BAS21SW,115 is the component you need. Its AEC Q101 automotive qualification ensures it thrives under the toughest conditions, while its tiny footprint makes integration into dense PCBs effortless. Whether you're designing power management circuits or precision switching systems, this diode offers unmatched performance per square millimeter, without overpromising its capabilities.

Product Highlights – What Makes It Stand Out

  • High Reverse Voltage (up to 250 V)
  • Ultra-Fast Recovery (trr ≤ 50 ns)
  • Low Reverse Leakage Current (≈ 100 nA @ 200 V)
  • Minimal Capacitance (Cd ≤ 2 pF)
  • Compact SOT 323 (SC 70) Package
  • High Forward Current Capability (up to 225 mA)
  • Automotive Grade Reliability (AEC Q101 qualified).

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