NXP BAP51‑02,115 SOD‑523 PIN RF Diode 60 V 50 mA General‑Purpose

The NXP BAP51-02,115 is a general-purpose silicon PIN diode, expertly engineered for RF and high-speed applications. Encased in an ultra-compact SOD‑523 (SC‑79) surface-mount package, this diode delivers exceptional low diode capacitance and low forward resistance, meeting stringent performance requirements in space-constrained designs.

Advanced Features of the Product

• Peak Reverse Voltage (VR): 60 V, providing robust protection in high-voltage environments.
• Maximum Forward Current (IF): 50 mA, enabling reliable signal handling.
• Power Dissipation (Pd): 715 mW, supports sustained usage in RF circuits.
• Diode Capacitance (Cd): ~0.35 pF at 5 V, 1 MHz, ideal for minimal signal loading.
• Forward Resistance (rD): ~2.5 Ω at 10 mA, 100 MHz, ensuring efficient signal throughput.
• Operating Temperature: –65 °C to +150 °C, suitable for harsh environments and industrial applications.

Unmatched Benefits and Use Cases

With its pin‑diode architecture, the BAP51‑02 enables efficient RF switching and signal attenuation. The low capacitance and low forward resistance preserve signal integrity up into the RF spectrum, making it ideal for:

• RF attenuators, modulators, and switches
• Fast, low‑distortion signal paths
• Harsh‑environment telecommunications, automotive, and industrial systems