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NXP PIMC31,115 Dual Pre‑Biased NPN/PNP Transistor RET TSOP‑6

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HT Part No. HT260577

Mfr. Part No. PIMC31,115

Manufacturer: NXP

Technical Documents: Datasheet(datasheets)

4342 - In Stock pcs
Price:
£ 0.083
Units Per Unit Price
2 - 2999 £ 0.083
3000 + £ 0.073
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Product Specification

Product Attributes
Manufacturer NXP
Voltage (Collector-Emitter) 50V
Transistor Type Equipped Transistor
Power Dissipation 420mW
Junction Temperature (Tj) 150°C
Mounting Type SMT
Package / Case TSOP6 (SOT457)
Current 500mA
Current Temperature (IC) 25°C
Operating Temperature -65°C~+150°C
Packaging TAPE&REEL
Channel NPN/PNP
Configuration Dual
Applications N/A
Rohs ROHS

More Information

Unlock smarter, more efficient circuit design with the Nexperia PIMC31,115, a rugged pre‑biased bipolar transistor pair engineered for industrial and automotive applications. This compact SOT457 (TSOP‑6) module integrates one NPN and one PNP transistor, each pre‑configured with bias resistors (R1 ≈ 1 kΩ, R2 ≈ 10 kΩ), optimizing board space and assembly efficiency.

Notable Advantages to Users

  • Simplified Design & BOM Reduction: Pre‑biased resistors eliminate external components, streamline board layout, and cut assembly time.
  • Automotive-Ready Quality: AEC-Q100 qualified for reliability under harsh environmental and thermal stress conditions.
  • Robust Performance: Supports moderate power switching and signal buffering with low VCEsat and solid current capacity.
  • Space-Saving SMT Form Factor: Compact TSOP-6 packaging supports high-density designs while maintaining ease of installation.

Product Usage Information

Ideal for load switching, input line drive, signal inversion, and digital protection circuits in automotive electronics, industrial control, and consumer devices.

Technical Specifications

  • Collector Current (Ic max): 500 mA
  • Collector‑Emitter Breakdown Voltage (VCEO): 50
  • Bias Resistors: R1 = ~1 kΩ; R2 = ~10 kΩ
  • DC Current Gain (hFE min): 70 @ 50 mA, 5 V
  • Saturation Voltage (VCEsat): ≤ 300 mV @ Ic = 50 mA, Ib = 2.5 mA
  • Power Dissipation (Pd): Up to ~420 mW (per device), ~290 mW per transistor, depending on mounting
  • Temperature Range (Tj/Tamb): –55 °C to +150 °C
  • Package Dimensions: 3.1 mm × 1.7 mm × 1 mm (L×W×H)

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