GBP
Achieve top-tier efficiency and rugged reliability with the PBSS4350X,115, an automotive-grade, NPN low‑V<sub>CEsat</sub> powerhouse in a compact SOT‑89 (SC‑62) form. Engineered for critical power switching, DC/DC conversion, supply-line gating, and inductive load control, this transistor is tailored for demanding industrial and automotive environments.
Key Specifications
- VCEsat: As low as 370 mV at IC=3 A, minimizing conduction losses.
- Power Dissipation: Up to 1.6 W (depending on PCB thermal design).
- Transition Frequency: 100 MHz, reliable switching at high speeds
- AEC‑Q101 / Q100 Qual: Built for automotive-grade reliability.
Product Crucial Features and Benefits
- Low VCEsat & High Current Capacity: Efficient power handling with reduced thermal stress, ideal for high-current switching and battery circuit applications.
- Compact SOT‑89 Packaging (~4.4 × 4.6 × 1.5 mm): Balances board-space efficiency with enhanced heat dissipation.
- Automotive‑Qualified: Delivers rugged performance in harsh thermal and electrical conditions.
- Wide Current Gain (hFE: 100–700): Provides design flexibility across biasing and switching regimes.
Materials & Dimensions
- Material: Silicon (Si) NPN bipolar transistor.
- Package: SOT‑89 surface-mount, marking code S43.
- Mounting: Optimal for both flat SMD layout and thermal compliance.