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FUJI ELECTRIC FDCY25S65, SILICON CARBIE SCHOTTKY 25A(110 C) 650V TO247

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HT Part No. HT299601

Mfr. Part No. FDCY25S65

Manufacturer: FUJI ELECTRIC

Technical Documents: Datasheet(datasheets)

5 - In Stock pcs
Price:
£ 10.47
Units Per Unit Price
1 - 29 £ 10.47
30 + £ 9.79
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Product Specification

Product Attributes
Package / Case TO247-3
Reverse Recovery Time (Trr) N/A
Peak Repetitive Reverse Voltage (VRRM) 650V
Rohs ROHS
Diode Configuration Single
Applications N/A
Packaging TUBE
Manufacturer FUJI ELECTRIC
Series Silicon Carbide (SiC) Schottky
Mounting Type THT
Polarity N/A
Average Rectified Current 25A
Operating Temperature +175°C

More Information

The FUJI ELECTRIC FDCY25S65 is a high-performance Silicon Carbide (SiC) Schottky diode designed for robust power applications. It offers advanced performance characteristics ideal for high-power applications where efficiency, reliability, and temperature resilience are critical.

Significant Benefits of the FUJI ELECTRIC FDCY25S65, Silicon Carbide (SiC) Schottky Diode

  • Silicon Carbide technology for high efficiency and low switching losses.
  • Reduced energy loss and improved thermal management due to SiC technology.
  • High reliability and long lifespan suitable for demanding industrial environments.
  • Enhanced system efficiency and reduced operating costs.

The FUJI ELECTRIC FDCY25S65, Silicon Carbide (SiC) Schottky Diode: Use Cases

  • Used in renewable energy systems like solar inverters and wind turbines.
  • Power supplies and industrial motor drives.
  • Electric vehicle (EV) charging systems and traction inverters.

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