Alliance Memory AS4C16M16SA-7TCN, SDRAM 256Mbit Surface Mount, 166MHz, 3 V to 3.6 V, 54-Pin TSOP

The Alliance Memory 256Mb SDRAM is a high-speed CMOS synchronous DRAM containing 256 Mbits. It is internally configured as 4 Banks of 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command. Fast access time from clock: 5/5.4 ns
Fast clock rate: 166/143 MHz
Fully synchronous operation
Internal pipelined architecture
4M word x 16-bit x 4-bank